{"id":1122,"date":"2021-09-07T09:09:43","date_gmt":"2021-09-07T09:09:43","guid":{"rendered":"https:\/\/people.utm.my\/michael\/?page_id=1122"},"modified":"2021-09-07T13:44:06","modified_gmt":"2021-09-07T13:44:06","slug":"publication","status":"publish","type":"page","link":"https:\/\/people.utm.my\/michael\/publication\/","title":{"rendered":"Publication"},"content":{"rendered":"\n

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NO<\/th>ARTICLE<\/th>JOURNAL<\/th>VOL.<\/th>ISSUES<\/th>PAGE<\/th>YEAR<\/th>IF<\/th>CATEGORY<\/th>QUARTILE<\/th>CATEGORY AUTHOR<\/th>\n<\/tr>\n<\/thead>\n
1<\/td>Impact of Phonon Scattering Mechanisms on the Performance of Silicene Nanoribbon Field-Effect Transistors<\/td>Results In Physics<\/td>29<\/td>104714<\/td>1-7<\/td>2021<\/td>4.476<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
2<\/td>Semi-Analytical Modelling and Evaluation of Uniformly Doped Silicene Nanotransistors for Digital Logic Gates<\/td>PLOS One<\/td>16<\/td>6<\/td>1-14<\/td>2021<\/td>2.74<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
3<\/td>Low-Dimensional Modelling of N-Type Doped Silicene and Its Carrier Transport Properties for Nanoelectronic Applications<\/td>Advances in Nano Research<\/td>10<\/td>5<\/td>415-422<\/td>2021<\/td>4.583<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
4<\/td>Performance metrics of current transport in pristine graphene nanoribbon field effect transistors using recursive non-equilibrium Green's function approach<\/td>Superlattices and Microstructures<\/td>145<\/td>106625<\/td>-<\/td>2020<\/td>2.12<\/td>ISI<\/td>Q3<\/td>Corresponding Author<\/td>\n<\/tr>\n
5<\/td>Carrier transport of rough-edged doped GNRFETs with metal contacts at various channel widths<\/td>Superlattices and Microstructures<\/td>143<\/td>106548<\/td>-<\/td>2020<\/td>2.12<\/td>ISI<\/td>Q3<\/td>Corresponding Author<\/td>\n<\/tr>\n
6<\/td>Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design<\/td>Journal of Nanotechnology<\/td>2020<\/td>7608279<\/td>-<\/td>2020<\/td>-<\/td>ISI<\/td>ESCI<\/td>Corresponding Author<\/td>\n<\/tr>\n
7<\/td>2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors<\/td>Current Nanoscience<\/td>16<\/td>4<\/td>-<\/td>2020<\/td>1.836<\/td>ISI<\/td>Q3<\/td>Corresponding Author<\/td>\n<\/tr>\n
8<\/td>A review of the top of the barrier nanotransistor models for semiconductor nanomaterials<\/td>Superlattices and Microstructures<\/td>140<\/td>106429<\/td>-<\/td>2020<\/td>2.385<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
9<\/td>Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors<\/td>Semiconductor Science and Technology<\/td>35<\/td>4<\/td>045023<\/td>2020<\/td>2.654<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
10<\/td>Carrier statistics of highly doped armchair graphene nanoribbons with edge disorder<\/td>Superlattices and Microstructures<\/td>139<\/td>106404<\/td>-<\/td>2020<\/td>2.385<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
11<\/td>Explicit Continuous Charge-Based Compact Model of Surrounding Gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation<\/td>Semiconductor Science and Technology<\/td>35<\/td>4<\/td>045007<\/td>2020<\/td>2.654<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
12<\/td>Electronic properties of graphene nanoribbons with line-edge roughness doped with nitrogen and boron<\/td>Physica E: Low-dimensional Systems and Nanostructures<\/td>117<\/td>113841<\/td>-<\/td>2020<\/td>3.176<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
13<\/td>Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure<\/td>Physica E: Low-dimensional Systems and Nanostructures<\/td>116<\/td>113731<\/td>-<\/td>2020<\/td>3.176<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
14<\/td>Modeling of lightly-doped drain and source contact with boron and nitrogen in graphene nanoribbon<\/td>Chinese Journal of Physics<\/td>62<\/td>-<\/td>258-273<\/td>2020<\/td>2.544<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
15<\/td>Effect of Low-k Oxide Thickness Variation on Gate-All-Around Floating Gate with Optimized SiO2\/La2O3 Tunnel Barrier<\/td>Materials Research Express<\/td>6<\/td>11<\/td>1-14<\/td>2019<\/td>1.449<\/td>ISI<\/td>Q3<\/td>Corresponding Author<\/td>\n<\/tr>\n
16<\/td>Scaling Challenges of Floating Gate Non-Volatile Memory and Graphene as the Future Flash Memory Device: A Review<\/td>Journal of Nanoelectronics and Optoelectronics<\/td>14<\/td>9<\/td>1195-1214<\/td>2019<\/td>0.989<\/td>ISI<\/td>Q4<\/td>Corresponding Author<\/td>\n<\/tr>\n
17<\/td>Influence of single vacancy defect at varying length on electronic properties of zigzag graphene nanoribbons<\/td>Indonesian Journal of Electrical Engineering and Informatics<\/td>7<\/td>2<\/td>366-374<\/td>2019<\/td>-<\/td>Scopus<\/td>-<\/td>Corresponding Author<\/td>\n<\/tr>\n
18<\/td>Modeling of low-dimensional pristine and vacancy incorporated graphene nanoribbons using tight binding model and their electronic structures<\/td>Advances in Nano Research<\/td>7<\/td>3<\/td>207-219<\/td>2019<\/td>2.333<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
19<\/td>Explicit Continuous Drain Current, Terminal Charge and Capacitance Models for Long-Channel Junctionless Nanowire Transistor (JNT) Incorporating Interface Traps<\/td>Physica Scripta<\/td>94<\/td>10<\/td>-<\/td>2019<\/td>1.902<\/td>ISI<\/td>Q2<\/td>Co-author<\/td>\n<\/tr>\n
20<\/td>Real Space Multigrid Method for Ballistic Carbon Nanotubes Field-Effect Transistor<\/td>Journal of Nanoelectronics and Optoelectronics<\/td>13<\/td>9<\/td>1284-1289<\/td>2018<\/td>1.069<\/td>ISI<\/td>Q4<\/td>Corresponding Author<\/td>\n<\/tr>\n
21<\/td>Hybrid of Multi-Car Elevator System and Double-Deck Elevator System<\/td>Journal of Theoretical & Applied Information Technology<\/td>96<\/td>9<\/td>3521-3540<\/td>2018<\/td>-<\/td>Scopus<\/td>-<\/td>Co-author<\/td>\n<\/tr>\n
22<\/td>Performance Evaluation of 14 nm FinFET-Based 6T Static Random Access Memory Cell Functionality for DC and Transient Analysis<\/td>Journal of Nanoelectronics and Optoelectronics<\/td>13<\/td>6<\/td>921-932<\/td>2018<\/td>1.069<\/td>ISI<\/td>Q4<\/td>Corresponding Author<\/td>\n<\/tr>\n
23<\/td>Graphene Nanoribbon Simulator of Electronic Properties Using MATLAB<\/td>Journal of Nanoelectronics and Optoelectronics<\/td>13<\/td>3<\/td>405-414<\/td>2018<\/td>1.069<\/td>ISI<\/td>Q4<\/td>Corresponding Author<\/td>\n<\/tr>\n
24<\/td>Modeling and Simulation of the Electronic Properties in Graphene Nanoribbons of Varying Widths and Lengths Using Tight-Binding Hamiltonian<\/td>Journal of Nanoelectronics and Optoelectronics<\/td>13<\/td>2<\/td>289-300<\/td>2018<\/td>1.069<\/td>ISI<\/td>Q4<\/td>Corresponding Author<\/td>\n<\/tr>\n
25<\/td>GFETSIM: Graphene Field-Effect Transistor Simulator of Interface Charge Density<\/td>Journal of Nanoelectronics and Optoelectronics<\/td>12<\/td>4<\/td>304-315<\/td>2017<\/td>0.675<\/td>ISI<\/td>Q3<\/td>Corresponding Author<\/td>\n<\/tr>\n
26<\/td>Analytical Assessment of Carbon Allotropes for Gas Sensor Applications<\/td>Measurement<\/td>92<\/td>-<\/td>295-302<\/td>2016<\/td>1.742<\/td>ISI<\/td>Q2<\/td>Co-author<\/td>\n<\/tr>\n
27<\/td>Metal-Oxide-Graphene Field-Effect Transistor: Interface Trap Density Extraction and Compact Model<\/td>Beilstein Journal of Nanotechnology<\/td>7<\/td>-<\/td>1368-1376<\/td>2016<\/td>2.778<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
28<\/td>General SPICE Modeling Procedure for Double-Gate Tunnel Field-Effect Transistors<\/td>Journal of Information and Communication Convergence Engineering<\/td>14<\/td>2<\/td>115-121<\/td>2016<\/td>-<\/td>KSCI<\/td>-<\/td>Co-author<\/td>\n<\/tr>\n
29<\/td>Phonon Scattering Effects in Drain-Current Model of Carbon Nanotube and Silicon Nanowire Field-Effect Transistors<\/td>Science of Advanced Materials<\/td>8<\/td>5<\/td>1028-1035<\/td>2016<\/td>2.598<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
30<\/td>Top-of-the-Barrier Ballistic Carbon Nanotubes and Graphene Nanoribbon Field-Effect Transistors Quantum Simulator<\/td>Science of Advanced Materials<\/td>7<\/td>12<\/td>2576-2582<\/td>2015<\/td>2.598<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
31<\/td>2-Dimensional (2D) Transition Metal Dichalcogenide Semiconductor Field-Effect Transistors: the Interface Trap Density Extraction and Compact Model<\/td>Semiconductor Science and Technology<\/td>30<\/td>4<\/td>075010<\/td>2015<\/td>2.19<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
32<\/td>Design and Performance Analysis of 1-bit FinFET Full Adder Cells for Subthreshold Region at 16nm Process Technology<\/td>Journal of Nanomaterials<\/td>2015<\/td>726175<\/td>-<\/td>2015<\/td>1.644<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
33<\/td>An Empirical Modeling of a Graphene Field-Effect Sensor<\/td>Journal of Computational and Theoretical Nanoscience<\/td>12<\/td>2<\/td>161-167<\/td>2015<\/td>1.343<\/td>ISI<\/td>Q3<\/td>Corresponding Author<\/td>\n<\/tr>\n
34<\/td>Performance Evaluation of Silicon Nanowire Gate-All-Around Field-Effect Transistors and their dependence of Channel Length and Diameter<\/td>Science of Advanced Materials<\/td>7<\/td>1<\/td>190-198<\/td>2015<\/td>2.598<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
35<\/td>Quasi-One-Dimensional Performance and Benchmarking of CMOS-Based Multichannel Carbon Nanotube versus Nanowire Field-Effect Transistor Models<\/td>Science of Advanced Materials<\/td>7<\/td>1<\/td>178-189<\/td>2015<\/td>2.598<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
36<\/td>Performance Benchmarking of 32 nm Predictive Technology Model CMOS with Silicon Nanowire Physic-based Compact Model of Field-Effect Transistors for Digital Logic Applications<\/td>Science of Advanced Materials<\/td>6<\/td>3<\/td>596-602<\/td>2014<\/td>2.509<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
37<\/td>Nanoscale Device Modeling and Circuit-level Performance Projection of Top-gated Graphene Nanoribbon Field-Effect Transistor for Digital Logic Gates<\/td>Science of Advanced Materials<\/td>6<\/td>3<\/td>569-576<\/td>2014<\/td>2.509<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
38<\/td>A Unified Drain-Current Model of Silicon Nanowire Field-Effect Transistor (SiNWFET) for Performance Metric Evaluation<\/td>Science of Advanced Materials<\/td>6<\/td>2<\/td>354-360<\/td>2014<\/td>2.509<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
39<\/td>Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects<\/td>Journal of Nanomaterials<\/td>2014<\/td>879813<\/td>-<\/td>2014<\/td>1.547<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
40<\/td>Analytical Modeling of Glucose Biosensors Based on Carbon Nanotubes<\/td>Nanoscale Research Letter<\/td>9<\/td>13<\/td>-<\/td>2014<\/td>2.52<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
41<\/td>Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs<\/td>Journal of Nanomaterials<\/td>2013<\/td>831252<\/td>-<\/td>2013<\/td>1.547<\/td>ISI<\/td>Q2<\/td>Corresponding Author<\/td>\n<\/tr>\n
42<\/td>Graphene Nanoribbon Field Effect Transistor Logic Gates Performance Projection<\/td>Journal of Computational and Theoretical Nanoscience<\/td>10<\/td>5<\/td>1164-1170<\/td>2013<\/td>0.673<\/td>ISI<\/td>Q3<\/td>Co-author<\/td>\n<\/tr>\n
43<\/td>High-field transport in a graphene nanolayer<\/td>Journal of Applied Physics<\/td>112<\/td>-<\/td>114330-4,<\/td>2013<\/td>2.21<\/td>ISI<\/td>Q1<\/td>Co-author<\/td>\n<\/tr>\n
44<\/td>Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET<\/td>Nanoscale Research Letters<\/td>7<\/td>-<\/td>467<\/td>2012<\/td>2.726<\/td>ISI<\/td>Q1<\/td>Corresponding Author<\/td>\n<\/tr>\n
45<\/td>Temperature-dependent ballistic transport in a channel with length below the scattering-limited mean free path<\/td>Journal of Applied Physics<\/td>111<\/td>5<\/td>054301<\/td>2012<\/td>2.168<\/td>ISI<\/td>Q2<\/td>Co-author<\/td>\n<\/tr>\n
46<\/td>MicroCircuit Modeling and Simulation Beyond Ohm\u0092s Law<\/td>IEEE Transactions on Education<\/td>54<\/td>1<\/td>34-40<\/td>2011<\/td>1.165<\/td>ISI<\/td>Q2<\/td>Co-author<\/td>\n<\/tr>\n
47<\/td>Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field<\/td>Journal of Applied Physics<\/td>108<\/td>11<\/td>114314<\/td>2010<\/td>2.072<\/td>ISI<\/td>Q1<\/td>Co-author<\/td>\n<\/tr>\n
48<\/td>The drift response to a high-electric-field in carbon nanotubes<\/td>Current Nanoscience<\/td>6<\/td>5<\/td>492-495<\/td>2010<\/td>1.472<\/td>ISI<\/td>Q2<\/td>Co-author<\/td>\n<\/tr>\n
49<\/td>Resistance Blow-Up Effect in Micro-Circuit Engineering<\/td>Solid State Electronics<\/td>54<\/td>12<\/td>1617-1624<\/td>2010<\/td>1.494<\/td>ISI<\/td>Q2<\/td>First author<\/td>\n<\/tr>\n
50<\/td>Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor<\/td>Microelectronics Journal<\/td>41<\/td>9<\/td>579-584<\/td>2010<\/td>0.778<\/td>ISI<\/td>Q3<\/td>Co-author<\/td>\n<\/tr>\n
51<\/td>The Dependence of Saturation Velocity on Temperature, Inversion Charge and Electric Field in a Nanoscale MOSFET<\/td>International Journal of Nano Electronics and Materials (IJNeM)<\/td>3<\/td>1<\/td>17-34<\/td>2009<\/td>-<\/td>Scopus<\/td>-<\/td>Co-author<\/td>\n<\/tr>\n
52<\/td>Nano-Physics of Transient Phenomenon in Semiconducting Devices and Circuits<\/td>Jurnal Teknologi D<\/td>50<\/td>-<\/td>119-125<\/td>2009<\/td>-<\/td>Scopus<\/td>-<\/td>Co-author<\/td>\n<\/tr>\n
53<\/td>The High-Field Drift Velocity in Degenerately-Doped Silicon Nanowires<\/td>International Journal of Nanotechnology<\/td>6<\/td>-<\/td>601-617<\/td>2009<\/td>1.184<\/td>ISI<\/td>Q2<\/td>Co-author<\/td>\n<\/tr>\n
54<\/td>The drain velocity overshoot in an 80-nm metal-oxide-semiconductor field-effect-transistor<\/td>Journal of Applied Physics<\/td>105<\/td>-<\/td>074503<\/td>2009<\/td>2.201<\/td>ISI<\/td>Q1<\/td>Co-author<\/td>\n<\/tr>\n
55<\/td>Scattering-Limited and Ballistic Transport in a Nano-CMOS Circuit<\/td>Microelectronics Journal<\/td>40<\/td>-<\/td>581-583<\/td>2009<\/td>0.859<\/td>ISI<\/td>Q3<\/td>Co-author<\/td>\n<\/tr>\n
56<\/td>Ballistic Mobility and Saturation Velocity in Low-Dimensional Nanostructure<\/td>Microelectronics Journal<\/td>40<\/td>-<\/td>540-542<\/td>2009<\/td>0.859<\/td>ISI<\/td>Q3<\/td>Co-author<\/td>\n<\/tr>\n
57<\/td>The Ultimate Ballistic Drift Velocity in a Carbon Nanotubes<\/td>Journal of Nanomaterials<\/td>-<\/td>769250<\/td>-<\/td>2008<\/td>0.688<\/td>ISI<\/td>Q3<\/td>Co-author<\/td>\n<\/tr>\n
58<\/td>Enhancement of Nano-RC Switching Delay due to the Resistance Blow-Up in InGaAs<\/td>NANO<\/td>2<\/td>4<\/td>233-237<\/td>2007<\/td>1.11<\/td>ISI<\/td>Q3<\/td>Co-author<\/td>\n<\/tr>\n
59<\/td>Ballistic Quantum Transport in a Nanoscale Metal-Oxide- Semiconductor Field-Effect Transistor<\/td>Applied Physics Letters<\/td>91<\/td>1<\/td>103510<\/td>2007<\/td>3.726<\/td>ISI<\/td>Q1<\/td>Co-author<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n\n","protected":false},"excerpt":{"rendered":"","protected":false},"author":21452,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_et_pb_use_builder":"off","_et_pb_old_content":"\n

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