• R. Muhammad, Z. Othaman, Y. Wahab, Z. Ibrahim & S. Sakrani (2016). Influence of Substrate Orientation on the Structural Properties of GaAs Nanowires in MOCVD. AIP Conference Proceeding, Vol 1725, doi: 10.1063/1.4945503 (Scopus).
• R. Muhammad, Y. Wahab, Z. Othaman & S. Sakrani (2015). Current-Voltage Characterization of Gallium Arsenide Nanowires Using a Conductive Atomic Force Microscopy. Advanced Material Research, Vol 1109, p 239-242, doi: 10.4028/www.scientific.net/AMR.1109.238 (Scopus).
• M A Khan, S Sakrani, Y Wahab, S Suhaimi & R. Muhammad (2014), Synthesis of Cu2O and ZnO and their Heterojunction Nanowires by Thermal Evaporation: A Short Review. Jurnal Teknologi, Vol 71(5) (Scopus), p 83-88.
• R. Muhammad, R. Ahamad, Z. Ibrahim & Z. Othaman (2014). Structure and Electrical Characterization of Gallium Arsenide Nanowires with different V/III ratio growth parameters. AIP Conference Proceedings, Vol 1588, p 257-260, doi: 10.1063/1.4866956 (Scopus).
• R. Muhammad, Y. Wahab, Z. Ibrahim, Z. Othaman, S. Sakrani& R. Ahamad (2014). The Effect of V/III Ratio on the Crystal Structure of Gallium Arsenide Nanowires. Advanced Materials Research, Vol 895, p 539-546. (Scopus).
• Rosnita M., Zulkafli O., Samsudi S., Yussof W. and Zuhairi I. (2013). The Electrical Conductivity of GaAs nanowires by Conductive Atomic Force Microscopy. Journal of Crystal Growth. (Web of Science). Impact Factor : 1.730 (submitted)
• Rosnita M., Zulkafli O., Zuhairi I., Samsudi S., Yussof W. (2012). The Initial Stages of GaAs/Au Eutectic Alloy Formation for the Growth of GaAs Nanowires. SainsMalaysiana, Vol 41, Issue 9, p 1137-1143, (Web of Science).Impact Factor = 0.408.
• Edy Wibowo, Zulkafli Othaman, Samsudi Sakrani, A S Ameruddin, D Aryanto, R Muhammad, Imam Sumpono. (2011). Morphology and Chemical Composition of InxGa1-xAs NWs Au-assisted Grown at Low Growth Temperature Using MOCVD. Journal of Applied Sciences. (Scopus). Vol 11 (7), p 1315-1320.
• Rosnita M., Zulkafli O., Samsudi S. and Yussof W. (2010). The effect of annealing process on the colloidal gold and GaAs nanowires. AIP Proceeding. Vol 1250. p 377-380. (Web of Science).
• Zulkafli O, Samsudi S, Amira S. Ameruddin, Didik A, Rosnita M, Imam Sumpono and Habib Hamidinezhad. (2010). Morphological evolution of ternary InxGa1-xAs nanowires (NWs) grown with Au-particle assisted using vertical chamber MOCVD. Journal of Fundamental Science. Vol 6 (2).
• Rosnita M., Zulkafli O., Yussof W. and Samsudi S. (2009). Gallium arsenide nanowires formed by Au-assisted MOCVD: Effect of growth temperature. Modern Applied Science. Vol 3(7) p 73-77.
• Rosnita M., Zulkafli O., Yussof W. and Samsudi S. (2009). Morphological and Electrical characterisation of GaAs nanowires. AIP Proceeding. Vol 1150. p 344-347. (Web of Science).
• Rosnita M., Zulkafli O., Samsudi S., Yussof W., Ahmad Radzi M. I., Imam S.and EdyWibowo. (2009). Growth rate of Gallium Arsenide Nanowires. Proceeding of International Conference Regional Annual Fundamental Science Seminar. Vol II. p 75-79.
• Rosnita M., Zulkafli O., Yussof W. and Samsudi S. (2009). Epitaxial Method of Quantum Devices Growth. Jurnal Fizik. Vol 4. p 1-9.
• Rosnita M., Zulkafli O., Yussof W. and Samsudi S. (2008). InAs/GaAs quantum dots grown by metal-organic chemical vapor deposition at different temperature. Modern Applied Science. Vol2 (3). p 70-74.
• R. Muhammad, Z. Othaman, Y. Wahab, L. K. Boo & S. Roslan (2008). Effect of Growth Temperature on InAs/GaAs Quantum Dots Grown by MOCVD. Solid State Science & Technology Letters. Vol 15 (2). P 150-155.
• Rosnita M., Zulkafli O., Samsudi S. and Yussof W. (2008). Vapour-liquid-solid mechanism using gold colloid for the growth of GaAs nanowires. Journal of Fundamental Science, Vol 4, p 363.
• Rosnita M., Zulkafli O., Yussof W. and Samsudi S. (2008). Epitaxial GaAs nanowires grown on GaAs substrate using VLS mechanism. Jurnal Fizik. Vol 3, p 52
• Zulkafli Othaman, Kheng Boo Lim, Samsudi Sakrani, Rosnita Muhammad (2008). The Stranski-Krastanov three dimensional island growth prediction on finite size model. Jurnal Fizik. Vol 3, p 1-5.
• Shahrizar Roslan, Zulkafli Othaman, Rosnita Muhammad, Lim Kheng Boo. Growth Parameters of InAs/GaAS quantum dots grown by MOVPE (2006). Jurnal Fizik. Vol 1. p 1-6.
• Lau Chen Chen, B. Ismail, M. N. Yusuf and R. Muhammad. Electronic Conduction Processes in Amorphous Silicon-Carbon Alloy (a-Si:C:H) Thin Films Prepared by RF Magnetron Sputtering (2005). Solid State Science and Technology. Vol 13, No 1 & 2. P 11-16.
THESIS
• Rosnita Muhammad (2011). Structure and Electrical Properties of Gallium Arsenide Nanowires Grown By Metal Organic Chemical Deposition. UniversitiTeknologi Malaysia
• Rosnita Muhammad (1997). The Studies of Structural, Optical and Electrical Properties of Tin (IV) Oxide and Effect of Gas Exposure. UniversitiTeknologi Malaysia.
• Rosnita Muhammad (1995). The Studies of Indium Metal and Semiconductor Silicon Contact. UniversitiTeknologi Malaysia.
BOOK CHAPTER
• Rosnita Muhammad, Yussof Wahab & Zulkafli Othaman, (2013). The Growth of Gallium Arsenide Nanowires. Sustainability in Advanced Materials. PENERBIT UTM (in press).
• Didik Aryanto, Zulkafli Othaman, Abd Khamim, Shahrizar, Rosnita Muhammad, Imam Sumpono & Amira Saryati (2008). Surface Morphology and Lateral Distribution of Self-assembled In0.5Ga0.5As Nanostructures grown on GaAs(100) Substrates. Advances in Fundamentals and Social Sciences. PENERBIT UTM. p 11-24
CONFERENCES
• S. Y. Jaafar, Y. Wahab, R. Muhammad, Z. Othaman, S. Sakrani & Z. Ibrahim, The Influence of RF Sputtering Power of Yttria-Stabilized Zirconia Nanostructure Electrolyte for SOFC Application, RAFSS 2016, UTM Kuala Lumpur, 19-20 May 2016.
• R. Muhammad, Z. Othaman, Y. Wahab and S. Sakrani, Influence of Substrate Orientation on the Structural Properties of GaAs Nanowires in MOCVD, ICAMST 2015, Gracia Hotel, Semarang, Indonesia, 6-7Oct 2015.
• R. Muhammad, Y. Wahab, Z. Othaman and S. Sakrani, III-V Semiconductor Nanowire for Solid Oxide Fuel Cells, ICFCHT 2015, Pullman Hotel and Resorts Kuala Lumpur, 1-3 Sept 2015.
• M A Khan, S Sakrani, Y Wahab, S Suhaimi and R Muhammad, The Synthesis of Cuprous Oxide Nanowires in the presence of Oxygen using a Hot Tube Thermal Evaporation Method, RAFSS 2014, Persada Johor International Centre, Johor, 8-10 Sept 2014.
• R Muhammad, Y Wahab, Z Othaman and R Ahamad, The Effect of Annealing Temperature on Gold Catalyst and Substrate Surface in the Growth of GaAs Nanowires, SEATUC 2014, MSuite JB, 3-5 March 2014.
• R Muhammad, Y Wahab, Z Othaman, S Sakrani and Z Ibrahim, Current-Voltage Characterization of Gallium Arsenide Nanowires Using Conductive Atomic Force Microscopy, NANO-SciTech 2014 & IC-NET 2014, UiTM, 28-3 March 2014.
• R Muhammad, Y Wahab, Z Othaman and Z Ibrahim, The Effect of Pre-Annealing Process to the Growth of GaAs Nanowires, ICAMN 2013, Park Royal Hotel, Penang, 19-22 November 2013.
• R Muhammad, R Ahamad, Z Ibrahim and Z Othaman, Structure and Electrical Characterization of Gallium Arsenide Nanowires with different V/III ratio growth parameters, IMFP 2013, AwanaGenting, KL, 27 – 30 Aug 2013.
• R Muhammad, W Yussof, Z Othaman, and S Sakrani,The Effect of V/III ratio on the crystal Structure of GaAs nanowire, ICSSST 2012, Holiday Inn, Melaka, 18 – 21 Dec 2012.
• R Muhammad, W Yussof, Z Othaman, and S Sakrani, The Effect of Substrate Orientation to the Structure of Gallium Arsenide Nanowire, RAFSS 2011, Thistle Hotel, JB, 20 -21 Dec 2011.
• R Muhammad, Z Othaman, R Ahamad and S Sakrani, The Growth of Gallium Arsenide Nanowires on Silicon Substrate using Metal Organic Chemical Vapor Deposition, RCSSST 2011, Seremban, November 2011.
• R Muhammad, Z Othaman, S Sakrani, Y Wahab, The effect of annealing process on the colloidal gold & GaAs nanowires,Persidangan Fizik Kebangsaan (PERFIK), Avillion Legacy, 7 – 9 Dec 2009
• R Muhammad, Z Othaman, S Sakrani, Y Wahab, Growth of Gallium Arsenide Nanowires on Silicon (100) substrate using a metal organic chemical vapor deposition, 25th RCSSST 2009,Bayview Beach Resort, Pulau Pinang, Nov 2009
• Z Othaman, R Muhammad & S Roslan, Uniform Indium Arsenide Quantum Dot Formation, 25th RCSSST 2009, Bayview Beach Resort, Pulau Pinang, Nov 2009
• R Muhammad, Z Othaman, S Sakrani, Y Wahab, Growth rate of GaAs nanowires, International Conference Regional Annual Fundamental Science Seminar (ICORAFSS), 3 – 4 Jun 2009
• Didik Aryanto, Zulkafli Othaman, Abd Khamim Ismail, Rosnita Muhammad, Amira Saryati, Surface morphology studies of single and double layer In0.5Ga0.5 As/GaAs quantum dots grown by stranski-krastanov growth modes, International Conference Regional Annual Fundamental Science Seminar (ICORAFSS), 3 – 4 Jun 2009
• H Hamidinezhad, Y Wahab, Z Othaman, R Muhammad, The role of catalyst metals to the growth of Si Nanowire, International Conference Regional Annual Fundamental Science Seminar (ICORAFSS), 3 – 4 Jun 2009
• Y Wahab, H Hamidinezhad, Z Othaman, R Muhammad, Edy Wibowo, Analysis of Silicon nanowires synthesized from SiO on silicon wafer substrate, International Conference Regional Annual Fundamental Science Seminar (ICORAFSS), 3 – 4 Jun 2009
• Didik Aryanto, Zulkafli Othaman, Abd. Khamim Ismail, Shahrizar Roslan, Rosnita Muhammad, Imam Sumpono, and Amira Saryati Ameruddin, Surface Morphology and Lateral Distribution of Self-Assembled In0.5Ga0.5As Nanostructures Grown on GaAs (100) Substrates. International Graduate Conference on Engineering and Science (IGCES ) 2008,23-24 Dec. 2008, UTM.
• Rosnita M., Zulkafli O., Samsudi S., Yussof W., Ahmad Radzi M. I., Imam S., EdyWibowo and DidikAryanto. Gallium Arsenide nanowires formed by Au assisted MOCVD :Effect of growth temperature. 24th Regional Conferenceon Solid State Science and Technology, 30 Nov – 2 Dec 2008, Port Dickson, Negeri Sembilan.
• Didik Aryanto, Zulkafli Othaman, Abd Khamim Ismail, Shahrizar Roslan, Rosnita Muhammad, Imam Sumpono, and Amira SaryatiAmerudin, Evolution of Surface Morphology of Self-Assembled InxGa1-xAs Nanostructures Grown on GaAs Substrate Using MOCVD. 24th Regional Conference on Solid State Science and Technology (RCSSST), 30 Nov – 2 Dec 2008, Port Dickson, Negeri Sembilan.
• Rosnita M., Zulkafli O., Samsudi S., Yussof W., Ahmad Radzi M. I., EdyWibowo and DidikAryanto. Epitaxial GaAs nanowires on GaAs grown by MOCVD. 2nd International Conference on Functional Materials and Devices (ICFMD 2008). 16-19 June 2008. Berjaya Time Square, Kuala Lumpur.
• Amira Saryati, Zulkafli Othaman, R Muhammad, Shahrizar, Didik, L K Boo, Formation of Germanium Quantum Dots on Silicon substrate, Regional Annual Fundamental Science Seminar (RAFSS), 27 – 29 May 2008.
• Didik Aryanto, Abd Khamim, Z Othaman, Shahrizar, R Muhammad, L K Boo, Effect of buffer layer thickness on the surface morphology of InGaAsepitaxy layer grown by MOCVD, Regional Annual Fundamental Science Seminar (RAFSS), 27 – 29 May 2008.
• K Nazimah , Y Wahab, S Sakrani, R Muhammad, Annealing effects on magnetic properties of thin film ferromagnetic multilayer structures, Regional Annual Fundamental Science Seminar (RAFSS), 27 – 29 May 2008.
• R Shahrizar, Z Othaman, R Muhammad, L K Boo, Amira, Didik, The role of atomic steps on the growth of InGaAs/GaAs quantum dots grown by MOVPE, Regional Annual Fundamental Science Seminar (RAFSS), 27 – 29 May 2008.
• R Muhammad, Z Othaman, S Sakrani, Y Wahab, InAs/GaAs Quantum Dots Grown By Chemical Vapor Deposition At Different Temperature, Regional Conference Solid State Science and Technology (RCSSST), 27 – 29 Nov 2007
• Shahrizar R, Z Othaman, R Muhammad, L K Boo, Growth parameters of InAs/GaAs quantum dots grown by MOVPE, Regional Conference Solid State Science and Technology (RCSSST), 27 – 29 Nov 2007
• L K Boo, Z Othaman, R Muhammad, Shahrizar, Uniform Indium arsenide Quantum Dots formation, Regional Conference Solid State Science and Technology (RCSSST), 27 – 29 Nov 2007
• Rosnita M., Zulkafli O. and Samsudi S. (2007). Epitaxial Methods of Quantum Devices Growth. Regional Annual Fundamental Science Seminar 2007. IbnuSina Institute, UTM. July 2007.
• Y Wahab, W WYeong, K Deraman, C B Soh, R Muhammad, Photoluminescence studies of In0.5Ga0.5As/GaAs quantum dots. Regional Conference Solid State Science and Technology (RCSSST), June 2006
• Y. Wahab, N. Subari, S. Sakrani and R. Muhammad. Temperature and non-magnetic layer thickness dependence GMR in ferromagnetic multilayer structure.The XXII Regional Conference Solid State Science and Technology , 18-21 Dec 2005, Hyatt Regency Hotel, Kuantan, Pahang.
• Lau Chen Chen, B. Ismail, M. N. Yusuf and R. Muhammad, Electronic Conduction Processes In Amorphous Silicon-Carbon Alloy (a-Si:C:H) Thin Films Prepared By Rf Magnetron Sputtering. The XXII Regional Conference Solid State Science and Technology, 18-21 Dec 2005, Hyatt Regency Hotel, Kuantan, Pahang.
• Yussof Wahab, Karim Deraman, Rosnita Muhammad and Mohd. Nor Yusof. The Sructural and Optical Characteristic Studies of Quantum Nanostructures for Single-Electron Materials, MingguPenyelidikanSainsdanMatematik 2005, 21 – 23 September 2005, Dewan Sultan Iskandar, UTM
• Lau Chen Chen, B. Ismail, M. N. Yusuf and R. Muhammad, Optical Properties Of Amorphous Silicon-Carbon Alloy Films Prepared Using Rf Magnetron Sputtering Technique. Annual Fundamental Science Seminar 2004 (AFSS 2004), 14-15 Jun 2004, InstitutIbnuSina, UTM.
• Lau Yee Chen, Samsudi Sakrani, Rashdi Shah Ahmad, Yussof Wahab and Rosnita Muhammad. Giant Magnetoresistance in Co/Cu/Co Nanostructures, International Conference on Advancement Science and Technology (iCAST), 5-7 August 2003, Kuala Lumpur.
• Rosnita Muhammad, Karim Deraman and Bakar Ismail, Kesan pemanasan dan dedahan oksigen ke atas saput tipis timah oksida (SnO2) yang disepuhlindap pada suhu berbeza-beza. Persidangan Serantau Sains Keadaan Pepejal ke XIII, 10-11 Disember 1996, UTM Johor.
• Rosnita Muhammad, Karim Deraman and Bakar Ismail, Perubahan kapasitans terhadap frekuensi pada julat suhu rendah 180 – 300 K bagi saput tipis SnO2. Persidangan Serantau Sains Keadaan Pepejal ke XII. 2-3 November 1995, USM Penang.