Publications

AfiqHamzah: Publication

ARTICLES IN JOURNALS
  1. Hamzah, A., Alias, N. E., Johari, Z., Tan, M. L. P., & Zakaria, J. (2024). Floating gate potential of gate-all-around floating gate memory cell: parameter extraction and compact model. Physica Scripta, 99(6), 0659d4.
  2. Kamisian, I., Marsono, M. N., Paraman, N., Hamzah, A., & Zakaria, J. (2024). Characterization of Early Termination for Stochastic Computing Image Processing Circuits. 2024 IEEE 14th Symposium on Computer Applications & Industrial Electronics (ISCAIE), 395–400.
  3. Riyadi, M. A., Wong, Y., Khoo, S. X., Hamzah, A., Alias, N. E., Lim, C. S., Cheong, C. M., & Tan, M. L. P. (2024). Electronic properties of single vacancy defect in boron nitride nanoribbons with edge perturbation. Plos One, 19(8), e0305555.
  4. Chuan, M. W., Lok, S. Z., Hamzah, A., Alias, N. E., Sultan, S. M., Lim, C. S., & Tan, M. L. P. (2023). Electronic properties of graphene nanoribbons with Stone-Wales defects using the tight-binding method. Advances in Nano Research, 14(1), 1–15.
  5. Taib, A. K., Johari, Z., Abd. Rahman, S. F., Mohd Yusoff, M. F., & Hamzah, A. (2023). Hydrogen gas sensing performance of a carbon-doped boron nitride nanoribbon at elevated temperatures. PLoS One, 18(3), e0282370.
  6. Isaak, S., Ndottiwa, A. M., Yusof, Y., Paraman, N., Hamzah, A., & Chew, Y. H. (2023). A 16-bit Brent-Kung Adder scheme for linear array photon counting circuit. AIP Conference Proceedings, 2795(1).
  7. Chin, H. C., Hamzah, A., Alias, N. E., & Tan, M. L. P. (2023). Modeling the impact of phonon scattering with strain effects on the electrical properties of MoS2 field-effect transistors. Micromachines, 14(6), 1235.
  8. Ramakrishnan, M., Alias, N. E., Hamzah, A., Tan, M. L. P., Yusof, Y., & Natarajamoorthy, M. (2023). Design and Analysis of Electrical Characteristics of 14nm SOI-based Trigate Gaussian Channel Junctionless FinFET. Journal of Physics: Conference Series, 2622(1), 12020.
  9. Ramakrishnan, M., Alias, N. E., Tan, M. L. P., Hamzah, A., Wahab, Y. A., & Hussin, H. (2023). Performance Analysis of 14nm SOI-based Trigate Gaussian Channel Junctionless FinFET with Punchthrough Stop Layer. 2023 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 1–4.
  10. Wong, K. L., Lai, K. W., Chuan, M. W., Wong, Y., Hamzah, A., Rusli, S., Alias, N. E., Sultan, S. M., Lim, C. S., & Tan, M. L. P. (2023). Edge perturbation on electronic properties of boron nitride nanoribbons. Advances in Nano Research, 15(5), 385.
  11. Chin, H. C., Hamzah, A., Alias, N. E., & Tan, M. L. P. (2023). Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors. Micromachines 2023, 14, 1235.
  12. Ng, K. H., Alias, N. E., Hamzah, A., Tan, M. L. P., Sheikh, U. U., & Wahab, Y. A. (2022). A March 5n FSM-Based Memory Built-In Self-Test (MBIST) Architecture with Diagnosis Capabilities. 2022 IEEE International Conference on Semiconductor Electronics (ICSE), 69–72.
  13. Affandi, S. A., Alias, N. E., Hamzah, A., Tan, M. L. P., & Hussin, H. (2022). Performance analysis of junctionless multi-bridge channel FET with strained SiGe application. 2022 IEEE International Conference on Semiconductor Electronics (ICSE), 17–20.
  14. Abdo, H., Alias, N. E., Hamzah, A., Kamisian, I., Tan, M. L. P., & Sheikh, U. U. (2022). Temperature Variation Operation of Mixed-VT 3T GC-eDRAM for Low Power Applications in 2Kbit Memory Array. International Journal of Integrated Engineering, 14(3), 193–201.
  15. Rahman, M. W., Alias, N. E., Hamzah, A., Tan, M. L. P., & Kamisian, I. (2022). Comprehensive Analysis of Gate Oxide Short in Junctionless Fin Field Effect Transistor. 2022 IEEE International Conference on Semiconductor Electronics (ICSE), 73–76.
  16. Johari, Z., Tan, Z. H., Rasol, M. F. M., Hamzah, A., Peng, M. T. L., Sultan, S. M., Alias, N. E., Isaak, S., & Yusoff, Y. (2022). Performance Comparison of CMOS and NMOS GNRFET Full Adder. ELEKTRIKA-Journal of Electrical Engineering, 21(2), 7–10.
  17. Chuan, M. W., Wong, Y. B., Hamzah, A., Alias, N. E., Sultan, S. M., Lim, C. S., & Tan, M. L. P. (2022). Electronic properties of monolayer silicon carbide nanoribbons using tight-binding approach. Advances in Nano Research, 12(2), 213–221.
  18. Chuan, M. W., Riyadi, M. A., Hamzah, A., Alias, N. E., Mohamed Sultan, S., Lim, C. S., & Tan, M. L. P. (2022). Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model. Plos One, 17(3), e0264483.
  19. Kasri, N. F., Piah, M. A. M., Adzis, Z., & Hamzah, A. (2022). Temperature Distribution Analysis in Parallel Plate Treatment Chamber for Pulsed Electric Field Processing: Numerical Study, ASEAN Engineering Journal, 12(3), 63–69.
  20. Chuan, M. W., Wong, K. L., Riyadi, M. A., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2021). Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates. Plos One, 16(6), e0253289.
  21. Abdo, H., Alias, N. E., Hamzah, A., Kamisian, I., Tan, M. L. P., & Sheikh, U. U. (2021). A 2 Kbit Memory Array of Mixed-V T GC-eDRAM Implemented in 130nm Standard CMOS Technology. 2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 153–156.
  22. Kong, T. S. N., Alias, N. E., Hamzah, A., Kamisian, I., Tan, M. L. P., Sheikh, U. U., & Wahab, Y. A. (2021). An efficient March (5N) FSM-based memory built-in self test (MBIST) architecture. 2021 IEEE Regional Symposium on Micro and Nanoelectronics (RSM), 76–79.
  23. Chuan, M. W., Riyadi, M. A., Hamzah, A., Alias, N. E., Sultan, S. M., Lim, C. S., & Tan, M. L. P. (2021). Impact of phonon scattering mechanisms on the performance of silicene nanoribbon field-effect transistors. Results in Physics, 29, 104714.
  24. Mathangi, R., Alias, N. E., Hamzah, A., Tan, M. L. P., & Mathan, N. (2021). Performance Analysis of an Efficient Montgomery Multiplier using Twin Precision Technique for ECC Hardware Accelerators. Journal of Physics: Conference Series, 1878(1), 012058.
  25. Soo, S. R., Hamzah, A., Alias, N. E., Kamisian, I., Tan, M. L. P., Isaak, S., & Johari, Z. (2021). Design of Low Power Gain-Cell eDRAM for 4Kb Memory Array in 130nm CMOS. 2021 International Conference on Electrical Engineering and Informatics (ICEEI), 1–6.
  26. Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2021). Device modelling and performance analysis of two-dimensional AlSi 3 ballistic nanotransistor. Advances in Nano Research, 10(1), 91–99.
  27. Chuan, M. W., Lau, J. Y., Wong, K. L., Hamzah, A., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2021). Low-dimensional modelling of n-type doped silicene and its carrier transport properties for nanoelectronic applications. Advances in Nano Research, 10(5), 415–422.
  28. Kasri, N. F., Piah, M. A. M., Hamzah, A., & Adzis, Z. (2021). Microcontroller-based pulse signal controller development for compact high voltage pulse generator: Practical development in food treatment technology. Journal of Food Processing and Preservation, 45(6), e15531.
  29. Hamid, F., Ezaila Alias, N., Hamzah, A., Johari, Z., Peng Tan, M. L., Ismail, R., & Soin, N. (2020). Reliability Analysis of Gate-All-Around Floating Gate (GAA-FG) with Variable Oxide Thickness for Flash Memory Cell. 4th Electron Devices Technology and Manufacturing Conference, EDTM 2020 – Proceedings. https://doi.org/10.1109/EDTM47692.2020.9117949
  30. Hosseingholipourasl, A., Ariffin, S. H. S., Ahmadi, M. T., Koloor, S. S. R., Petrů, M., & Hamzah, A. (2020). An analytical conductance model for gas detection based on a zigzag carbon nanotube sensor. Sensors (Switzerland), 20(2). https://doi.org/10.3390/s20020357
  31. Wong, K. L., Chuan, M. W., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2020). Carrier statistics of highly doped armchair graphene nanoribbons with edge disorder. Superlattices and Microstructures, 139. https://doi.org/10.1016/j.spmi.2020.106404
  32. Hosseingholipourasl, A., Syed Ariffin, S. H., Rahimian Koloor, S. S., Petru, M., & Hamzah, A. (2020). Analytical Prediction of Highly Sensitive CNT-FET-Based Sensor Performance for Detection of Gas Molecules. IEEE Access, 8. https://doi.org/10.1109/ACCESS.2020.2965806
  33. Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2020). Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure. Physica E: Low-Dimensional Systems and Nanostructures, 116. https://doi.org/10.1016/j.physe.2019.113731
  34. Wong, K. L., Chuan, M. W., Hamzah, A., Rusli, S., Alias, N. E., Mohamed Sultan, S., Lim, C. S., & Tan, M. L. P. (2020). Electronic properties of graphene nanoribbons with line-edge roughness doped with nitrogen and boron. Physica E: Low-Dimensional Systems and Nanostructures, 117. https://doi.org/10.1016/j.physe.2019.113841
  35. Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2020). Two-dimensional modelling of uniformly doped silicene with aluminium and its electronic properties. Advances in Nano Research, 9(2). https://doi.org/10.12989/anr.2020.9.2.105
  36. Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2020). A review of the top of the barrier nanotransistor models for semiconductor nanomaterials. Superlattices and Microstructures, 140. https://doi.org/10.1016/j.spmi.2020.106429
  37. Wong, K. L., Chuan, M. W., Hamzah, A., Rusli, S., Alias, N. E., Sultan, S. M., Lim, C. S., & Tan, M. L. P. (2020). Carrier transport of rough-edged doped GNRFETs with metal contacts at various channel widths. Superlattices and Microstructures, 143, 106548.
  38. Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2020). 2D honeycomb silicon: A review on theoretical advances for silicene field-effect transistors. Current Nanoscience, 16(4), 595–607.
  39. Wong, K. L., Chuan, M. W., Hamzah, A., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2020). Performance metrics of pristine graphene nanoribbons field-effect transistor with different types of contacts. 2020 IEEE 2nd International Conference on Artificial Intelligence in Engineering and Technology (IICAIET), 1–5.
  40. Chuan, M. W., Wong, K. L., Hamzah, A., Rusli, S., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2020). Device performance of silicene nanoribbon field-effect transistor under ballistic transport. 2020 IEEE International Conference on Semiconductor Electronics (ICSE), 5–8.
  41. Alias, N. E., Ishaak, S., Hong, K. J., Tan, M. L. P., Hamzah, A., & Wahab, Y. A. (2020). ASIC implementation and optimization of 16 Bit SDRAM memory controller. 2020 IEEE International Conference on Semiconductor Electronics (ICSE), 81–84.
  42. Sule, M. A., Ramakrishnan, M., Alias, N. E., Paraman, N., Johari, Z., Hamzah, A., Tan, M. L. P., & Sheikh, U. U. (2020). Impact of device parameter variation on the electrical characteristic of n-type junctionless nanowire transistor with high-k dielectrics. Indonesian Journal of Electrical Engineering and Informatics (IJEEI), 8(2), 400–408.
  43. Alias, N. E., Sule, M. A., Tan, M. L. P., Hamzah, A., Saidu, K. A., Mohammed, S., Aminu, T. K., & Shehu, A. (2020). Electrical characterization of n-type cylindrical gate all around nanowire junctionless transistor with SiO2 and high-k dielectrics. 2020 IEEE International Conference on Semiconductor Electronics (ICSE), 13–16.
  44. Hamzah, A., Alias, N. E., Tan, M. L. P., Hosseingholipourasl, A., & Ismail, R. (2020). Explicit continuous charge-based compact model of surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation. Semiconductor Science and Technology, 35(4), 45007.
  45. Wong, K. L., Chuan, M. W., Hamzah, A., Rusli, S., Alias, N. E., Sultan, S. M., Lim, C. S., & Tan, M. L. P. (2020). Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green’s function approach. Superlattices and Microstructures, 145, 106624.
  46. Chuan, M. W., Wong, K. L., Hamzah, A., Alias, N. E., Lim, C. S., & Tan, M. L. P. (2020). Electronic properties of zigzag silicene nanoribbons with single vacancy defect. Indonesian Journal of Electrical Engineering and Computer Science, 19(1), 77–84.
  47. Wong, K. L., Chuan, M. W., Chong, W. K., Hamzah, A., Bin Rusli, M. S., Binti Alias, N. E., Lim, C. S., & Tan, M. L. P. (2019). Influence of single vacancy defect at varying length on electronic properties of zigzag graphene nanoribbons. Indonesian Journal of Electrical Engineering and Informatics, 7(2). https://doi.org/10.11591/ijeei.v7i2.1138
  48. Hamzah, A., Ismail, R., Alias, N. E., Tan, M. L. P., & Poorasl, A. (2019). Explicit continuous models of drain current, terminal charges and intrinsic capacitance for a long-channel junctionless nanowire transistor. Physica Scripta, 94(10), 1–12. https://doi.org/10.1088/1402-4896/ab139b
  49. Hamid, F. A., Hamzah, A., Ezaila Alias, N., & Ismail, R. (2019). Optimization of high-k composite dielectric materials of variable oxide thickness tunnel barrier for nonvolatile memory. Indonesian Journal of Electrical Engineering and Computer Science, 14(2), 765–772. https://doi.org/10.11591/ijeecs.v14.i2.pp765-772
  50. Ahmad, M. H., Alias, N. E., Hamzah, A., Johari, Z., Abidin, M. S. Z., Paraman, N., & Ismail, R. (2019). Reliability of graphene as charge storage layer in floating gate flash memory. Indonesian Journal of Electrical Engineering and Informatics, 7(2). https://doi.org/10.11591/ijeei.v7i2.1170
  51. Noor, M. F. M., Alias, N. E., Hamzah, A., Johari, Z., & Peng, M. T. L. (2019). Design of 6T SRAM Cell Using Optimized 20 nm SOI Junctionless Transistor. Proceedings of the 2019 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2019, 141–144. https://doi.org/10.1109/RSM46715.2019.8943541
  52. Hamid, F. A., Alias, N. E., Johari, Z., Hamzah, A., Tan, M. L. P., & Ismail, R. (2019). Effect of low-k oxide thickness variation on gate-all-around floating gate with optimized SiO2/La2O3 tunnel barrier. Materials Research Express, 6(11), 1150c6. https://doi.org/10.1088/2053-1591/ab2869
  53. Wong, K. L., Chuan, M. W., Chong, W. K., Alias, N. E., Hamzah, A., Lim, C. S., & Tan, M. L. P. (2019). Modeling of low-dimensional pristine and vacancy incorporated graphene nanoribbons using tight binding model and their electronic structures. Advances in Nano Research, 7(3).
  54. Chuan, M. W., Wong, K. L., Hamzah, A., Riyadi, M. A., Alias, N. E., & Tan, M. L. P. (2019). Electronic properties of silicene nanoribbons using tight-binding approach. Proceeding – 2019 International Symposium on Electronics and Smart Devices, ISESD 2019. https://doi.org/10.1109/ISESD.2019.8909598
  55. Alias, N. E., Hamzah, A., Tan, M. L. P., Sheikh, U. U., & Riyadi, M. A. (2019). Low-power and high performance of an optimized FinFET based 8T SRAM cell design. 2019 6th International Conference on Electrical Engineering, Computer Science and Informatics (EECSI), 66–70.
  56. Wong, K. L., Tan, B. R., Chuan, M. W., Hamzah, A., Rusli, S., Alias, N. E., Sultan, S. M., Lim, C. S., & Tan, M. L. P. (2019). Modeling of lightly-doped drain and source contact with boron and nitrogen in graphene nanoribbon. Chinese Journal of Physics, 62, 258–273.
  57. Hamzah, A., Ahmad, H., Tan, M. L. P., Alias, N. E., Johari, Z., & Ismail, R. (2019). Scaling challenges of floating gate non-volatile memory and graphene as the future flash memory device: a review. Journal of Nanoelectronics and Optoelectronics, 14(9), 1195–1214.
  58. Hamzah, A., Ezaila Alias, N., & Ismail, R. (2018). Low-voltage high-speed programming gate-all-around floating gate memory cell with tunnel barrier engineering. Japanese Journal of Applied Physics, 57(6). https://doi.org/10.7567/JJAP.57.06KC02
  59. Lim, W. H., Hamzah, A., Ahmadi, M. T., & Ismail, R. (2018). Performance analysis of one dimensional BC2N for nanoelectronics applications. Physica E: Low-Dimensional Systems and Nanostructures, 102, 33–38.
  60. Ahmad, M. H., Alias, N. E., Hamzah, A., Johari, Z., Abidin, M. S. Z., & Ismail, R. (2018). Graphene as Charge Storage Layer in Floating Gate Flash Memory with Highk Tunnel Barrier Engineering. 2018 IEEE Student Conference on Research and Development (SCOReD), 1–5.
  61. Hamid, F. A., Hamzah, A., Mohamad, A., Ismail, R., & Razali, M. A. (2017). Impact of strain on electrical performance of Silicon Nanowire MOSFET. Proceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017, 67–70. https://doi.org/10.1109/RSM.2017.8069117
  62. Lim, W. H., Hamzah, A., Ahmadi, M. T., & Ismail, R. (2017). Analytical study of the electronic properties of boron nitride nanosheet. Proceedings of the 2017 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017. https://doi.org/10.1109/RSM.2017.8069115
  63. Lim, W. H., Hamzah, A., Ahmadi, M. T., & Ismail, R. (2017). Band gap engineering of BC2N for nanoelectronic applications. Superlattices and Microstructures, 112, 328–338.
  64. Sakina, S. H., Johari, Z., Auzar, Z., Alias, N. E., Hamzah, A., & Yusoff, M. F. M. (2016). Improving transport properties of armchair graphene nanoribbon by warping: A first principle study. IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, 2016-Septe. https://doi.org/10.1109/SMELEC.2016.7573612
  65. Hamzah, A., Johari, Z., & Ismail, R. (2016). A charge-based compact modeling of cylindrical surrounding-floating gate MOSFET (S-FGMOSFET) for memory cell application. 2016 IEEE International Conference on Semiconductor Electronics (ICSE), 157–160.
  66. Hamzah, A., Hamid, F. A., & Ismail, R. (2016). Explicit continuous charge-based compact model for long channel heavily doped surrounding-gate MOSFETs incorporating interface traps and quantum effects. Semiconductor Science and Technology, 31(12). https://doi.org/10.1088/0268-1242/31/12/125020
  67. Hamzah, A., & Ismail, R. (2016). Performance prediction of graphene nanoscroll and carbon nanotube transistors. 2016 IEEE International Conference on Semiconductor Electronics (ICSE), 149–152.
  68. Hamzah, A., Adila Syaidatul, A., Ismail, R., & Johari, Z. (2015). Performance Benchmarking of Graphene Nanoscroll Transistor with 22nm MOSFET Model. Regional Symposium on Micro and Nanoelectronics, 1–4.
  69. Hamzah, A., Ahmadi, M. T., & Ismail, R. (2015). Analytical Study of Electronic Structure in Archimedean Type-Spiral Zig-Zag Graphene Nanoscroll. Current Nanoscience, 11(1), 87–94.
  70. Hamzah, A., Ahmadi, M. T., & Ismail, R. (2013). Quantum Capacitance Effect on Zig-Zag Graphene Nanoscrolls (ZGNS) (16, 0). Modern Physics Letters B, 27(1). https://doi.org/10.1142/S0217984913500024
  71. Bahador, N., Ahmadi, M. T., Hamid, F. K. A., Johari, Z., Hamzah, A., Isaak, S., & Ismail, R. (2013). Low-Dimensional Silicon Nanowire (SiNW) Conductance Model. Quantum Matter, 2(5), 417–420.
  72. Hamzah, A., Ahmadi, M. T., Kiani, M. J., Hamid, F. K. A., Bahador, A., & Ismail, R. (2012). Temperature effect on quantum capacitance zig-zag graphene nanoscrolls (ZGNS) (16,0). 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 – Proceedings. https://doi.org/10.1109/SMElec.2012.6417145
  73. Bahador, N., Hamid, F. K. A., Hamzah, A., Isaak, S., & Ismail, R. (2012). Improved dead time response for Si Avalanche Photodiode. Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference On, 396–398. https://doi.org/10.1109/SMElec.2012.6417170