ARTICLES
IN JOURNALS
- Afiq Hamzah, N. Ezaila Alias, Michael Loong Peng Tan, Ali Hosseingholipourasl and Razali Ismail, (2020), Explicit Continuous Charge-Based Compact Model of Surrounding gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation, Journal of Semiconductor Science Technology, 35(4), pp. 1-11.
- Afiq Hamzah, Razali Ismail, N. Ezaila Alias, Michael Loong Peng Tan, and Ali Poorasl, (2019), Explicit Continuous Models of Drain Current, Terminal Charges, nad Intrinsic Capacitance for a Long-Channel Junctionless Nanowire Transistor, Physica Scripta, vol. 94(10), pp. 1-12.
- Afiq Hamzah, M. A. Hilman, N. Ezaila Alias and Razali Ismail, Scaling Challenges of Floating Gate Non-Volatile Memory and Graphene as the Future Flash Memory Device: A Review, Journal of Nanoelectronics and Optoelectronics, (2019).
- Afiq Hamzah, N. Ezaila Alias and Razali Ismail, (2018). Low-Voltage High-Speed Programming Gate-All-Around Floating Gate (GAA-FG) Memory Cell with Tunnel Barrier Engineering, Japanese Journal of Applied Physics, vol. 57(6S3), pp. 06KC02.
- Lim, Wei Hong, Afiq Hamzah, Mohammad Taghi Ahmadi, and Razali Ismail, (2018). Performance Analysis of One Dimensional BC2N for Nanoelectronics Applications. Physica E: Low-Dimensional Systems and Nanostructures 102: 33–38.
- W. H. Lim, A. Hamzah, M. T. Ahmadi, and R. Ismail., (2017). Band gap engineering of BC2N for nanoelectronic applications, Superlattices Microstructure., vol. 112, pp. 328–338, 2017.
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