Undergraduate Final Year Projects

  1. Rizuan B. MohD Mahrol – Pencirian Arus-Voltan (I-V) Bagi Transistor Medan Logam-Oksida-Silikon, MOSFET (2000 – 2001).
  2. Sirajul Fahmi B. Mohd Said – Pencirian Arus-Voltan (I-V) Pada Konfigurasi Pemancar Sepunya Transistor Dwi Kutub (BJT). (2000-2001)
  3. Shahnaz B. Abu Bakar – Kesan Stress Terhadap Pencirian Voltan pada Konfigurasi Pemancar Sepunya transistor Simpangan Dwi-Kutub. (2001-2002).
  4. Zaireen Bt. Hasnan –  Mencari Nilai n Parameter Daripada n Persamaan Serentak Dengan Menggunakan Kaedah Penghapusan Gauss dan Penggantian Kebelakang Melalui Pengaturancaraan C++ (2001 –2002)
  5. Goopi A/L Maniam – Mengkaji Kesan Stress Yang Merupakan Faktor Masa Penggunaan Terhadap Pencirian Arus Voltan n-MOSFET. (2001-2002)
  6. Wong Woan Woan – Kesan Perubahan Voltan Vds Terhadap Pencirian  Elektrik Arus Penyalur-Sumber Ids Kepada Voltan Get-Sumber Vgs Bagi Transistor Kesan Medan Logam-Oksida-Silikon (MOSFET) Jenis n. (2002-2003)
  7. Ling Mee Ling – Mengkaji Ciri Keluaran Transistor Dwi-Kutub (BJT) Dalam Konfigurasi Pemancar Sepunya (Common Emitter Configuration)Dengan Arus Tapak Yang Tertentu. (2002-2003)
  8. Sarasvathy A/P Kanniah – Kesan Hall atau pengaruh medan magnet semasa melakukan  pencirian elektrik terhadap Semikonduktor silicium Intrisik menambahkan nilai voltan ambang silisium tersebut . (2002-2003)
  9. Sin Boon Han – Electrical Characterization of Semiconductor Devices – Thyristor at Forward Blocking State. (2003-2004)
  10. Ooi Soo Yee – Dimension Effects to Electrical Characterization of n-MOSFET Using Simulation PSPICE. (2004-2005)
  11. Hafida Hamzah – Mengkaji Pencirian Elektrik dan Fungsi Thyristor dalam Litar Elektrik. (2004-2005)
  12. Kunju Raman A/L Ragawan – Characterization of Semiconductor Devices – IGBT as Switching Devices . (2004-2005)
  13. W.M.W Suriya – Mengkaji Pencirian Elektrik dan Fungsi IGBT Sebagai Transistor Kuasa Tinggi. (2003 – 2004)
  14. Chung Yen Ting – Fabrication Temperature Effects to Electrical Characterization of n-MOSFET Using Simulation PSPICE. (2005 – 2006)
  15. Mohd Norhadi Rusdi – Mengkaji Kesan Radiasi Gamma TerhadapPencirian Elektrik Transistor Dwi-kutub (Bipolar Junction Transistor – BJT). (2005 – 2006)
  16. Nur Fatihah Mohd Yusof – Kesan Suhu Terhadap Pencirian Elektrik Transistor Simpangan DwiKutub (BJT) Menggunakan Simulasi PSPICE. (2006 – 2007)
  17. Nurul Humaimah Mansor – Mengkaji Pencirian N-MOSFET Dengan Perubahan Konsentrasi Pendopan Substrat Menggunakan PSPICE (2006 – 2007)
  18. Rahmatia Badaini – Mengkaji Ciri Elektrik MOSFET Terhadap Perubahan Suhu Operasi Menggunakan Simulasi PSPICE. (2006 – 2007).
  19. Norha Abdul Hadi – Mengkaji Kesan Dos Radiasi Gamma terhadap Pencirian Elektrik n-MOSFET Menggunakan PSPICE. (2007 – 2008)
  20. Michele Anak Linda – Mengkaji Kesan Stress Masa Operasi Transistor Terhadap Pencirian Elektrik  p-MOSFET.  (2007 – 2008)
  21. Mohd Azizir Rahom Mukri – Mengkaji Pengaruh Tempoh Operasi Litar Terhadap pencirian Elektrik n-MOSFET. (2007 – 2008)
  22. Nor Aslida Abdul Razak – The Effects of Neutron Radiation To The n-MOSFETs Electrical Characteristics. (2008 – 2009)
  23. Zahanim Zakaria – The Effects of Substrate Doping Concentration to the p-MOSFETs Electrical Characterization by Using PSPICE. (2008 – 2009)
  24. Mohd Syafiq Affandi – Mengkaji Kesan Dopan Di Bawah Sumber Dan Parit Terhadap Pencirian Elektrik n-MOSFET Dengan Menggunakan Simulasi MOSFET. (2009 – 2010)
  25. Teng Xiao Pei – Temperature Effects To Electrical Parameters Of  p-MOSFET Using PSPICE. (2009 -2010)
  26. Ng Ming Wei –  Simulation of Channel or Gate Dimensional Effects on Electrical Characteristics of p-MOSFET Using PSPICE .(2009 – 2010)
  27. Chang Sze Xian – Operation Temperature Effects to Electrical Parameters of Insulated Gate Bipolar Transistor (IGBT). (2010 – 2011)
  28. Siti Norsheila Bt. Zahari – The Effect of Substrate Doping Concentration to The Submicron n-MOSFET Electrical Characterization. (2010 -2011)
  29. Halimatunnisa Bt. Abdul Talib – Base Length of Submicron Bipolar Junction Transistor (BJT) to Electrical Characterics by Simulation. (2010 – 2011)
  30. Mohd Helmi B. Mohd Nasir – Base Concentration Effects of PNP Bipolar Junction Transistor (BJT) to the Electrical Characteizations by Simulation. (2011 – 2012)
  31. Mohd Safwan B. Alwee – Emitter and Collector Doping Effects of NPN Bipolar Junction Transistor (BJT) to the Electrical Characterizations. (2011 – 2012)
  32. Nursyahirah Bt. Mustapha – The Effects of Base Doping Concentrations to NPN Bipolar Junction Transistor Electrical Parameters. (2011 – 2012)
  33. Nuraimi Ahmad – Development of Diode Laser System in Skin Medical Ablation (2013 – 2014).
  34. Ng Chooi Pheng – The Effect of Channel Lengths to the n-MOSFET Electrical Characteristics (2013 – 2014).