“The engineer has been, and is, a maker of history.” — James Kip Finch
Supervision
Research Project
Level | Status | Student’s Name | Title |
PhD (Main-Supervisor) | On-going (Candidate 2020) | Syafizah Afidah Binti Affandi | Charge-Based Compact Modeling Of Junctionless Multibridge Channel Transistor With Strain For Radio-Frequency Application |
PhD (Main-Supervisor) | On-going (Candidate 2020) | Muhammad Faris Bin Md Noor | Defect Characterization And Electrical Modelling Of Magnetic Tunnel Junction (MTJ) |
Master by Research (Main-Supervisor) | On-going (Candidate 2019) | Mathangi R. | Design And Analysis Of Electrical characteristics Of 14nm Junctionless Finfet with Gaussian Doped Channel |
PhD (Co-Supervisor) | On-going (Candidate 2017) | Leong Chie Hou | Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors |
Master by Research (Main-Supervisor) | Graduated (2020) | Muhammad Hilman Bin Ahmad | Graphene Floating Gate Flash Memory With High-K Tunnel Barrier Engineering |
Master by Research (Main-Supervisor) | Graduated (2019) | Farah Aqilah Binti Abd Hamid | Variable Oxide Thickness Optimization And Reliability Analysis Of Gate-All-Around Floating Gate For Flash Memory Cell |
PhD (Co-Supervisor) | Graduated (2019) | Fatimah Khairiah Binti Abd Hamid | Explicit Charge-Based For Strained-Silicon Gate-All-Around Mosfet Including Quantom And Short Channel Effects |
PhD (Co-Supervisor) | Graduated (2018) | Muhammad Afiq Nurudin Bin Hamzah | Charge-Based Compact Model Of Gate-All-Around Floating Gate Nanowire With Variable Oxide Thickness For Flash Memory Cell |
Master by Research (Co-Supervisor) | Graduated (2018) | Zuriana Binti Auzar | Atomistic Simulation Of Gas Adsorption On Defective Armchair Graphene Nanoribbon Formed Using Ion Bormbardment |
Master by Research (Co-Supervisor) | Graduated (2018) | Sakina Binti Shamim Husain | Sensing Properties Of Deformed Graphene Nanoribbon Through Warping |
Project
Research Fundings
Title | Grant Name | Position | Amount | Duration |
A Computational Analysis on the Prospects of Phosphorene based FET Devices for Bio-Sensing Application | ASEAN-India Collaborative R&D scheme | Co-Investigator | USD 30,110 | April 2020 – Mac 2022 (2 years) |
Tight Binding Approach Analysis of Carbon Doped Boron Nitride (BC2N) Based Schottky Junction (Diode) for Gas sensor application | Fundamental Research Grant Scheme (FRGS) | Co-Investigator | RM 89,700 | Nov 2020 – Oct 2022 (2 years) |
Charge-Based Compact Modeling of Junctionless Nanowire Transistor with Strain for Low Power Digital Logic Circuits | Fundamental Research Grant Scheme (FRGS) | Principal Investigator | RM 60,500 | Sep 2019 – May 2022 (2 years 9 months) |
Charge-Based Modeling of Gate-All-Around Floating Gate (GAA-FG) with Quantum Effects on Variable Oxide Thickness (VARIOT) Tunnel Layer for Flash Memory Cell Purpose | Fundamental Research Grant Scheme (FRGS) | Co-Investigator | RM 63,700 | Sep 2019 – May 2022 (2 years 9 months) |
Performance Analysis Of SOI-Based Junctionless Transistor For 6T And 8T SRAM CELL | UTM Tier 2 Grant | Principal Investigator | RM 40,000 | August 2019 – Jan 2022 (2 years 6 months) |
UTM-TDR25.2(T2): Electrical Performance And Reliability Characterization Of Carbon Based Device | UTM Transdisciplinary Research Grant | Principal Investigator | RM 40,000 | Dec 2018 – May 2022 (3 years 6 months) |
Electronic Properties Modeling And Quantum Transport Simulation Of Graphene Nanoribbons With Vacancy And Doping Effects | Fundamental Research Grant Scheme (FRGS) | Co-Investigator | RM 58,200 | Jan 2019 – Sep 2022 (2 years 9 months) |
Performance Analysis Of Gate-All-Around (GAA) Silicon Nanowire (SiNW) Floating Gate (FG) Memory Device With High-K Dielectrics | UTM Tier 2 Grant | Principal Investigator | RM 20,000 | July 2017 – Sep 2018 (1 year 3 months) |
Study Of Device Reliability And Variability From Planar To Twin Si Nanowire Finfet (TSNWFET) | UTM Encouragement Grant | Principle Investigator | RM 20,000 | Jan 2015 – Mac 2016 (1 year 6 months) |
Simulation Study Of Device Variability And Reliability In Nanoscale 3d FinFET | UTM Potential Academic Staff | Principle Investigator | RM 20,000 | Jan 2015 – Dec 2015 (1 year 3 months) |
Indexed
Journal Publication
