| 1 | Impact of Phonon Scattering Mechanisms on the Performance of Silicene Nanoribbon Field-Effect Transistors | Results In Physics | 29 | 104714 | 1-7 | 2021 | 4.476 | ISI | Q1 | Corresponding Author |
| 2 | Semi-Analytical Modelling and Evaluation of Uniformly Doped Silicene Nanotransistors for Digital Logic Gates | PLOS One | 16 | 6 | 1-14 | 2021 | 2.74 | ISI | Q2 | Corresponding Author |
| 3 | Low-Dimensional Modelling of N-Type Doped Silicene and Its Carrier Transport Properties for Nanoelectronic Applications | Advances in Nano Research | 10 | 5 | 415-422 | 2021 | 4.583 | ISI | Q2 | Corresponding Author |
| 4 | Performance metrics of current transport in pristine graphene nanoribbon field effect transistors using recursive non-equilibrium Green's function approach | Superlattices and Microstructures | 145 | 106625 | - | 2020 | 2.12 | ISI | Q3 | Corresponding Author |
| 5 | Carrier transport of rough-edged doped GNRFETs with metal contacts at various channel widths | Superlattices and Microstructures | 143 | 106548 | - | 2020 | 2.12 | ISI | Q3 | Corresponding Author |
| 6 | Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design | Journal of Nanotechnology | 2020 | 7608279 | - | 2020 | - | ISI | ESCI | Corresponding Author |
| 7 | 2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors | Current Nanoscience | 16 | 4 | - | 2020 | 1.836 | ISI | Q3 | Corresponding Author |
| 8 | A review of the top of the barrier nanotransistor models for semiconductor nanomaterials | Superlattices and Microstructures | 140 | 106429 | - | 2020 | 2.385 | ISI | Q2 | Corresponding Author |
| 9 | Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistors | Semiconductor Science and Technology | 35 | 4 | 045023 | 2020 | 2.654 | ISI | Q2 | Corresponding Author |
| 10 | Carrier statistics of highly doped armchair graphene nanoribbons with edge disorder | Superlattices and Microstructures | 139 | 106404 | - | 2020 | 2.385 | ISI | Q2 | Corresponding Author |
| 11 | Explicit Continuous Charge-Based Compact Model of Surrounding Gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operation | Semiconductor Science and Technology | 35 | 4 | 045007 | 2020 | 2.654 | ISI | Q2 | Corresponding Author |
| 12 | Electronic properties of graphene nanoribbons with line-edge roughness doped with nitrogen and boron | Physica E: Low-dimensional Systems and Nanostructures | 117 | 113841 | - | 2020 | 3.176 | ISI | Q2 | Corresponding Author |
| 13 | Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructure | Physica E: Low-dimensional Systems and Nanostructures | 116 | 113731 | - | 2020 | 3.176 | ISI | Q2 | Corresponding Author |
| 14 | Modeling of lightly-doped drain and source contact with boron and nitrogen in graphene nanoribbon | Chinese Journal of Physics | 62 | - | 258-273 | 2020 | 2.544 | ISI | Q2 | Corresponding Author |
| 15 | Effect of Low-k Oxide Thickness Variation on Gate-All-Around Floating Gate with Optimized SiO2/La2O3 Tunnel Barrier | Materials Research Express | 6 | 11 | 1-14 | 2019 | 1.449 | ISI | Q3 | Corresponding Author |
| 16 | Scaling Challenges of Floating Gate Non-Volatile Memory and Graphene as the Future Flash Memory Device: A Review | Journal of Nanoelectronics and Optoelectronics | 14 | 9 | 1195-1214 | 2019 | 0.989 | ISI | Q4 | Corresponding Author |
| 17 | Influence of single vacancy defect at varying length on electronic properties of zigzag graphene nanoribbons | Indonesian Journal of Electrical Engineering and Informatics | 7 | 2 | 366-374 | 2019 | - | Scopus | - | Corresponding Author |
| 18 | Modeling of low-dimensional pristine and vacancy incorporated graphene nanoribbons using tight binding model and their electronic structures | Advances in Nano Research | 7 | 3 | 207-219 | 2019 | 2.333 | ISI | Q2 | Corresponding Author |
| 19 | Explicit Continuous Drain Current, Terminal Charge and Capacitance Models for Long-Channel Junctionless Nanowire Transistor (JNT) Incorporating Interface Traps | Physica Scripta | 94 | 10 | - | 2019 | 1.902 | ISI | Q2 | Co-author |
| 20 | Real Space Multigrid Method for Ballistic Carbon Nanotubes Field-Effect Transistor | Journal of Nanoelectronics and Optoelectronics | 13 | 9 | 1284-1289 | 2018 | 1.069 | ISI | Q4 | Corresponding Author |
| 21 | Hybrid of Multi-Car Elevator System and Double-Deck Elevator System | Journal of Theoretical & Applied Information Technology | 96 | 9 | 3521-3540 | 2018 | - | Scopus | - | Co-author |
| 22 | Performance Evaluation of 14 nm FinFET-Based 6T Static Random Access Memory Cell Functionality for DC and Transient Analysis | Journal of Nanoelectronics and Optoelectronics | 13 | 6 | 921-932 | 2018 | 1.069 | ISI | Q4 | Corresponding Author |
| 23 | Graphene Nanoribbon Simulator of Electronic Properties Using MATLAB | Journal of Nanoelectronics and Optoelectronics | 13 | 3 | 405-414 | 2018 | 1.069 | ISI | Q4 | Corresponding Author |
| 24 | Modeling and Simulation of the Electronic Properties in Graphene Nanoribbons of Varying Widths and Lengths Using Tight-Binding Hamiltonian | Journal of Nanoelectronics and Optoelectronics | 13 | 2 | 289-300 | 2018 | 1.069 | ISI | Q4 | Corresponding Author |
| 25 | GFETSIM: Graphene Field-Effect Transistor Simulator of Interface Charge Density | Journal of Nanoelectronics and Optoelectronics | 12 | 4 | 304-315 | 2017 | 0.675 | ISI | Q3 | Corresponding Author |
| 26 | Analytical Assessment of Carbon Allotropes for Gas Sensor Applications | Measurement | 92 | - | 295-302 | 2016 | 1.742 | ISI | Q2 | Co-author |
| 27 | Metal-Oxide-Graphene Field-Effect Transistor: Interface Trap Density Extraction and Compact Model | Beilstein Journal of Nanotechnology | 7 | - | 1368-1376 | 2016 | 2.778 | ISI | Q1 | Corresponding Author |
| 28 | General SPICE Modeling Procedure for Double-Gate Tunnel Field-Effect Transistors | Journal of Information and Communication Convergence Engineering | 14 | 2 | 115-121 | 2016 | - | KSCI | - | Co-author |
| 29 | Phonon Scattering Effects in Drain-Current Model of Carbon Nanotube and Silicon Nanowire Field-Effect Transistors | Science of Advanced Materials | 8 | 5 | 1028-1035 | 2016 | 2.598 | ISI | Q1 | Corresponding Author |
| 30 | Top-of-the-Barrier Ballistic Carbon Nanotubes and Graphene Nanoribbon Field-Effect Transistors Quantum Simulator | Science of Advanced Materials | 7 | 12 | 2576-2582 | 2015 | 2.598 | ISI | Q1 | Corresponding Author |
| 31 | 2-Dimensional (2D) Transition Metal Dichalcogenide Semiconductor Field-Effect Transistors: the Interface Trap Density Extraction and Compact Model | Semiconductor Science and Technology | 30 | 4 | 075010 | 2015 | 2.19 | ISI | Q1 | Corresponding Author |
| 32 | Design and Performance Analysis of 1-bit FinFET Full Adder Cells for Subthreshold Region at 16nm Process Technology | Journal of Nanomaterials | 2015 | 726175 | - | 2015 | 1.644 | ISI | Q2 | Corresponding Author |
| 33 | An Empirical Modeling of a Graphene Field-Effect Sensor | Journal of Computational and Theoretical Nanoscience | 12 | 2 | 161-167 | 2015 | 1.343 | ISI | Q3 | Corresponding Author |
| 34 | Performance Evaluation of Silicon Nanowire Gate-All-Around Field-Effect Transistors and their dependence of Channel Length and Diameter | Science of Advanced Materials | 7 | 1 | 190-198 | 2015 | 2.598 | ISI | Q1 | Corresponding Author |
| 35 | Quasi-One-Dimensional Performance and Benchmarking of CMOS-Based Multichannel Carbon Nanotube versus Nanowire Field-Effect Transistor Models | Science of Advanced Materials | 7 | 1 | 178-189 | 2015 | 2.598 | ISI | Q1 | Corresponding Author |
| 36 | Performance Benchmarking of 32 nm Predictive Technology Model CMOS with Silicon Nanowire Physic-based Compact Model of Field-Effect Transistors for Digital Logic Applications | Science of Advanced Materials | 6 | 3 | 596-602 | 2014 | 2.509 | ISI | Q1 | Corresponding Author |
| 37 | Nanoscale Device Modeling and Circuit-level Performance Projection of Top-gated Graphene Nanoribbon Field-Effect Transistor for Digital Logic Gates | Science of Advanced Materials | 6 | 3 | 569-576 | 2014 | 2.509 | ISI | Q1 | Corresponding Author |
| 38 | A Unified Drain-Current Model of Silicon Nanowire Field-Effect Transistor (SiNWFET) for Performance Metric Evaluation | Science of Advanced Materials | 6 | 2 | 354-360 | 2014 | 2.509 | ISI | Q1 | Corresponding Author |
| 39 | Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects | Journal of Nanomaterials | 2014 | 879813 | - | 2014 | 1.547 | ISI | Q2 | Corresponding Author |
| 40 | Analytical Modeling of Glucose Biosensors Based on Carbon Nanotubes | Nanoscale Research Letter | 9 | 13 | - | 2014 | 2.52 | ISI | Q1 | Corresponding Author |
| 41 | Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETs | Journal of Nanomaterials | 2013 | 831252 | - | 2013 | 1.547 | ISI | Q2 | Corresponding Author |
| 42 | Graphene Nanoribbon Field Effect Transistor Logic Gates Performance Projection | Journal of Computational and Theoretical Nanoscience | 10 | 5 | 1164-1170 | 2013 | 0.673 | ISI | Q3 | Co-author |
| 43 | High-field transport in a graphene nanolayer | Journal of Applied Physics | 112 | - | 114330-4, | 2013 | 2.21 | ISI | Q1 | Co-author |
| 44 | Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET | Nanoscale Research Letters | 7 | - | 467 | 2012 | 2.726 | ISI | Q1 | Corresponding Author |
| 45 | Temperature-dependent ballistic transport in a channel with length below the scattering-limited mean free path | Journal of Applied Physics | 111 | 5 | 054301 | 2012 | 2.168 | ISI | Q2 | Co-author |
| 46 | MicroCircuit Modeling and Simulation Beyond Ohms Law | IEEE Transactions on Education | 54 | 1 | 34-40 | 2011 | 1.165 | ISI | Q2 | Co-author |
| 47 | Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field | Journal of Applied Physics | 108 | 11 | 114314 | 2010 | 2.072 | ISI | Q1 | Co-author |
| 48 | The drift response to a high-electric-field in carbon nanotubes | Current Nanoscience | 6 | 5 | 492-495 | 2010 | 1.472 | ISI | Q2 | Co-author |
| 49 | Resistance Blow-Up Effect in Micro-Circuit Engineering | Solid State Electronics | 54 | 12 | 1617-1624 | 2010 | 1.494 | ISI | Q2 | First author |
| 50 | Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor | Microelectronics Journal | 41 | 9 | 579-584 | 2010 | 0.778 | ISI | Q3 | Co-author |
| 51 | The Dependence of Saturation Velocity on Temperature, Inversion Charge and Electric Field in a Nanoscale MOSFET | International Journal of Nano Electronics and Materials (IJNeM) | 3 | 1 | 17-34 | 2009 | - | Scopus | - | Co-author |
| 52 | Nano-Physics of Transient Phenomenon in Semiconducting Devices and Circuits | Jurnal Teknologi D | 50 | - | 119-125 | 2009 | - | Scopus | - | Co-author |
| 53 | The High-Field Drift Velocity in Degenerately-Doped Silicon Nanowires | International Journal of Nanotechnology | 6 | - | 601-617 | 2009 | 1.184 | ISI | Q2 | Co-author |
| 54 | The drain velocity overshoot in an 80-nm metal-oxide-semiconductor field-effect-transistor | Journal of Applied Physics | 105 | - | 074503 | 2009 | 2.201 | ISI | Q1 | Co-author |
| 55 | Scattering-Limited and Ballistic Transport in a Nano-CMOS Circuit | Microelectronics Journal | 40 | - | 581-583 | 2009 | 0.859 | ISI | Q3 | Co-author |
| 56 | Ballistic Mobility and Saturation Velocity in Low-Dimensional Nanostructure | Microelectronics Journal | 40 | - | 540-542 | 2009 | 0.859 | ISI | Q3 | Co-author |
| 57 | The Ultimate Ballistic Drift Velocity in a Carbon Nanotubes | Journal of Nanomaterials | - | 769250 | - | 2008 | 0.688 | ISI | Q3 | Co-author |
| 58 | Enhancement of Nano-RC Switching Delay due to the Resistance Blow-Up in InGaAs | NANO | 2 | 4 | 233-237 | 2007 | 1.11 | ISI | Q3 | Co-author |
| 59 | Ballistic Quantum Transport in a Nanoscale Metal-Oxide- Semiconductor Field-Effect Transistor | Applied Physics Letters | 91 | 1 | 103510 | 2007 | 3.726 | ISI | Q1 | Co-author |
