1Impact of Phonon Scattering Mechanisms on the Performance of Silicene Nanoribbon Field-Effect TransistorsResults In Physics291047141-720214.476ISIQ1Corresponding Author
2Semi-Analytical Modelling and Evaluation of Uniformly Doped Silicene Nanotransistors for Digital Logic GatesPLOS One1661-1420212.74ISIQ2Corresponding Author
3Low-Dimensional Modelling of N-Type Doped Silicene and Its Carrier Transport Properties for Nanoelectronic ApplicationsAdvances in Nano Research105415-42220214.583ISIQ2Corresponding Author
4Performance metrics of current transport in pristine graphene nanoribbon field effect transistors using recursive non-equilibrium Green's function approachSuperlattices and Microstructures145106625-20202.12ISIQ3Corresponding Author
5Carrier transport of rough-edged doped GNRFETs with metal contacts at various channel widthsSuperlattices and Microstructures143106548-20202.12ISIQ3Corresponding Author
6Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM DesignJournal of Nanotechnology20207608279-2020-ISIESCICorresponding Author
72D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect TransistorsCurrent Nanoscience164-20201.836ISIQ3Corresponding Author
8A review of the top of the barrier nanotransistor models for semiconductor nanomaterialsSuperlattices and Microstructures140106429-20202.385ISIQ2Corresponding Author
9Compact device modelling of interface trap charges with quantum capacitance in MoS2-based field-effect transistorsSemiconductor Science and Technology35404502320202.654ISIQ2Corresponding Author
10Carrier statistics of highly doped armchair graphene nanoribbons with edge disorderSuperlattices and Microstructures139106404-20202.385ISIQ2Corresponding Author
11Explicit Continuous Charge-Based Compact Model of Surrounding Gate MOSFET (SRGMOSFET) with smooth transition between partially-depleted to fully-depleted operationSemiconductor Science and Technology35404500720202.654ISIQ2Corresponding Author
12Electronic properties of graphene nanoribbons with line-edge roughness doped with nitrogen and boronPhysica E: Low-dimensional Systems and Nanostructures117113841-20203.176ISIQ2Corresponding Author
13Electronic properties and carrier transport properties of low-dimensional aluminium doped silicene nanostructurePhysica E: Low-dimensional Systems and Nanostructures116113731-20203.176ISIQ2Corresponding Author
14Modeling of lightly-doped drain and source contact with boron and nitrogen in graphene nanoribbonChinese Journal of Physics62-258-27320202.544ISIQ2Corresponding Author
15Effect of Low-k Oxide Thickness Variation on Gate-All-Around Floating Gate with Optimized SiO2/La2O3 Tunnel BarrierMaterials Research Express6111-1420191.449ISIQ3Corresponding Author
16Scaling Challenges of Floating Gate Non-Volatile Memory and Graphene as the Future Flash Memory Device: A ReviewJournal of Nanoelectronics and Optoelectronics1491195-121420190.989ISIQ4Corresponding Author
17Influence of single vacancy defect at varying length on electronic properties of zigzag graphene nanoribbonsIndonesian Journal of Electrical Engineering and Informatics72366-3742019-Scopus-Corresponding Author
18Modeling of low-dimensional pristine and vacancy incorporated graphene nanoribbons using tight binding model and their electronic structuresAdvances in Nano Research73207-21920192.333ISIQ2Corresponding Author
19Explicit Continuous Drain Current, Terminal Charge and Capacitance Models for Long-Channel Junctionless Nanowire Transistor (JNT) Incorporating Interface TrapsPhysica Scripta9410-20191.902ISIQ2Co-author
20Real Space Multigrid Method for Ballistic Carbon Nanotubes Field-Effect TransistorJournal of Nanoelectronics and Optoelectronics1391284-128920181.069ISIQ4Corresponding Author
21Hybrid of Multi-Car Elevator System and Double-Deck Elevator SystemJournal of Theoretical & Applied Information Technology9693521-35402018-Scopus-Co-author
22Performance Evaluation of 14 nm FinFET-Based 6T Static Random Access Memory Cell Functionality for DC and Transient AnalysisJournal of Nanoelectronics and Optoelectronics136921-93220181.069ISIQ4Corresponding Author
23Graphene Nanoribbon Simulator of Electronic Properties Using MATLABJournal of Nanoelectronics and Optoelectronics133405-41420181.069ISIQ4Corresponding Author
24Modeling and Simulation of the Electronic Properties in Graphene Nanoribbons of Varying Widths and Lengths Using Tight-Binding HamiltonianJournal of Nanoelectronics and Optoelectronics132289-30020181.069ISIQ4Corresponding Author
25GFETSIM: Graphene Field-Effect Transistor Simulator of Interface Charge DensityJournal of Nanoelectronics and Optoelectronics124304-31520170.675ISIQ3Corresponding Author
26Analytical Assessment of Carbon Allotropes for Gas Sensor ApplicationsMeasurement92-295-30220161.742ISIQ2Co-author
27Metal-Oxide-Graphene Field-Effect Transistor: Interface Trap Density Extraction and Compact ModelBeilstein Journal of Nanotechnology7-1368-137620162.778ISIQ1Corresponding Author
28General SPICE Modeling Procedure for Double-Gate Tunnel Field-Effect TransistorsJournal of Information and Communication Convergence Engineering142115-1212016-KSCI-Co-author
29Phonon Scattering Effects in Drain-Current Model of Carbon Nanotube and Silicon Nanowire Field-Effect TransistorsScience of Advanced Materials851028-103520162.598ISIQ1Corresponding Author
30Top-of-the-Barrier Ballistic Carbon Nanotubes and Graphene Nanoribbon Field-Effect Transistors Quantum SimulatorScience of Advanced Materials7122576-258220152.598ISIQ1Corresponding Author
312-Dimensional (2D) Transition Metal Dichalcogenide Semiconductor Field-Effect Transistors: the Interface Trap Density Extraction and Compact ModelSemiconductor Science and Technology30407501020152.19ISIQ1Corresponding Author
32Design and Performance Analysis of 1-bit FinFET Full Adder Cells for Subthreshold Region at 16nm Process TechnologyJournal of Nanomaterials2015726175-20151.644ISIQ2Corresponding Author
33An Empirical Modeling of a Graphene Field-Effect SensorJournal of Computational and Theoretical Nanoscience122161-16720151.343ISIQ3Corresponding Author
34Performance Evaluation of Silicon Nanowire Gate-All-Around Field-Effect Transistors and their dependence of Channel Length and DiameterScience of Advanced Materials71190-19820152.598ISIQ1Corresponding Author
35Quasi-One-Dimensional Performance and Benchmarking of CMOS-Based Multichannel Carbon Nanotube versus Nanowire Field-Effect Transistor ModelsScience of Advanced Materials71178-18920152.598ISIQ1Corresponding Author
36Performance Benchmarking of 32 nm Predictive Technology Model CMOS with Silicon Nanowire Physic-based Compact Model of Field-Effect Transistors for Digital Logic ApplicationsScience of Advanced Materials63596-60220142.509ISIQ1Corresponding Author
37Nanoscale Device Modeling and Circuit-level Performance Projection of Top-gated Graphene Nanoribbon Field-Effect Transistor for Digital Logic GatesScience of Advanced Materials63569-57620142.509ISIQ1Corresponding Author
38A Unified Drain-Current Model of Silicon Nanowire Field-Effect Transistor (SiNWFET) for Performance Metric EvaluationScience of Advanced Materials62354-36020142.509ISIQ1Corresponding Author
39Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with InterconnectsJournal of Nanomaterials2014879813-20141.547ISIQ2Corresponding Author
40Analytical Modeling of Glucose Biosensors Based on Carbon NanotubesNanoscale Research Letter913-20142.52ISIQ1Corresponding Author
41Long Channel Carbon Nanotube as an Alternative to Nanoscale Silicon Channels in Scaled MOSFETsJournal of Nanomaterials2013831252-20131.547ISIQ2Corresponding Author
42Graphene Nanoribbon Field Effect Transistor Logic Gates Performance ProjectionJournal of Computational and Theoretical Nanoscience1051164-117020130.673ISIQ3Co-author
43High-field transport in a graphene nanolayerJournal of Applied Physics112-114330-4,20132.21ISIQ1Co-author
44Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFETNanoscale Research Letters7-46720122.726ISIQ1Corresponding Author
45Temperature-dependent ballistic transport in a channel with length below the scattering-limited mean free pathJournal of Applied Physics111505430120122.168ISIQ2Co-author
46MicroCircuit Modeling and Simulation Beyond Ohm’s LawIEEE Transactions on Education54134-4020111.165ISIQ2Co-author
47Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric fieldJournal of Applied Physics1081111431420102.072ISIQ1Co-author
48The drift response to a high-electric-field in carbon nanotubesCurrent Nanoscience65492-49520101.472ISIQ2Co-author
49Resistance Blow-Up Effect in Micro-Circuit EngineeringSolid State Electronics54121617-162420101.494ISIQ2First author
50Analytical modeling of high performance single-walled carbon nanotube field-effect-transistorMicroelectronics Journal419579-58420100.778ISIQ3Co-author
51The Dependence of Saturation Velocity on Temperature, Inversion Charge and Electric Field in a Nanoscale MOSFETInternational Journal of Nano Electronics and Materials (IJNeM)3117-342009-Scopus-Co-author
52Nano-Physics of Transient Phenomenon in Semiconducting Devices and CircuitsJurnal Teknologi D50-119-1252009-Scopus-Co-author
53The High-Field Drift Velocity in Degenerately-Doped Silicon NanowiresInternational Journal of Nanotechnology6-601-61720091.184ISIQ2Co-author
54The drain velocity overshoot in an 80-nm metal-oxide-semiconductor field-effect-transistorJournal of Applied Physics105-07450320092.201ISIQ1Co-author
55Scattering-Limited and Ballistic Transport in a Nano-CMOS CircuitMicroelectronics Journal40-581-58320090.859ISIQ3Co-author
56Ballistic Mobility and Saturation Velocity in Low-Dimensional NanostructureMicroelectronics Journal40-540-54220090.859ISIQ3Co-author
57The Ultimate Ballistic Drift Velocity in a Carbon NanotubesJournal of Nanomaterials-769250-20080.688ISIQ3Co-author
58Enhancement of Nano-RC Switching Delay due to the Resistance Blow-Up in InGaAsNANO24233-23720071.11ISIQ3Co-author
59Ballistic Quantum Transport in a Nanoscale Metal-Oxide- Semiconductor Field-Effect TransistorApplied Physics Letters91110351020073.726ISIQ1Co-author